vssa310s www.vishay.com vishay general semiconductor revision: 27-mar-12 1 document number: 89138 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount trench mos barrier schottky rectifier features ? low profile package ? ideal for automated placement ? trench mos schottky technology ? low power losses, high efficiency ? low forward voltage drop ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 2 01 class 1a whisker test polarity: color band denotes the cathode end notes (1) mounted on 10 mm x 10 mm pad areas, 1 oz. fr4 p.c.b. (2) free air, mounted on re commended copper pad area primary characteristics i f(av) 3.0 a v rrm 100 v i fsm 60 a e as 24 mj v f at i f = 3.0 a 0.62 v t j max. 150 c do-214ac ( s ma) tmb s ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vssa310s unit device marking code v3b maximum repetitive peak reverse voltage v rrm 100 v maximum dc forward current i f (1) 3.0 a i f (2) 1.7 peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 60 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh e as 24 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c i rrm 1.0 a operating junction and st orage temperature range t j , t stg - 40 to + 150 c
vssa310s www.vishay.com vishay general semiconductor revision: 27-mar-12 2 document number: 89138 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms notes (1) free air, mounted on recommended p.c.b. 1 oz. pad area. thermal resistance r ? ja - junction to ambient (2) units mounted on p.c.b. with 10 mm x 10 mm copper pad areas. r ? jm - junction to mount ratings and characteristics curves (t a = 25 ? c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 100 (minimum) - v instantaneous forward voltage i f = 3.0 a t a = 25 c v f (1) 0.71 0.80 v t a = 125 c 0.62 0.70 reverse current v r = 70 v t a = 25 c i r (2) 1.0 - a t a = 125 c 0.95 - ma v r = 100 v t a = 25 c 3.5 150 a t a = 125 c 2.2 15 ma typical junction capacitance 4.0 v, 1 mhz c j 175 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vssa310s unit typical thermal resistance r ? ja (1) 135 c/w r ? jm (2) 25 ordering information (example) preferred p/n unit weight (g) preferred packag e code base quantity delivery mode vssa310s-e3/61t 0.064 61t 1800 7" diameter plastic tape and reel vssa310s-e3/5at 0.064 5at 7500 13" diameter plastic tape and reel 0 25 50 75 100 125 3.5 150 t m - mo u nt temperat u re (c) a v erage for w ard re ctified c u rr ent (a ) 2.5 2.0 1.5 0.5 0 1.0 t m meas u red at terminal 3.0 0 3.6 0 2.6 a v erage for w ard c u rrent (a) a v erage po w er loss (w) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 2.2 2.0 1.8 1.6 2.4
vssa310s www.vishay.com vishay general semiconductor revision: 27-mar-12 3 document number: 89138 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance fig. 6 - typical tran sient thermal impedance package outline dimensions in inches (millimeters) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 0 0.1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 10 20 40 60 0.0001 0.001 0.01 0.1 1 10 80 100 percent of rated peak re v erse v oltage ( % ) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 30 50 70 90 instantaneo u s re v erse c u rrent (ma) 100 10 10 100 1000 0.1 1 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 100 10 1 100 1000 0.01 1 t - p u lse d u ration (s) transient thermal impedance (c/w) 10 0.1 j u nction to ambient 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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